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PD - 96236AIRF1404ZGPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 3.7ml Halogen-Free GDescription ID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operating temperature,fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable deviceTO-220ABfor use in a wide variety of applications.IRF1404ZGPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, VGS @ 10V (Silicon Limited)ID @ TC = 25C 190ID @ TC = 100C Continuous Drain Curre