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PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operating temperature,fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable deviceTO-220AB D2Pak TO-262for use in a wide variety of applications.IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbFAbsolute Maximum RatingsParameter Max. Unit