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IRF240SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 13.9A RDS(on) 0.180FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT HIGH PACKING DENSITIESSMD1 PACKAGEPad 1 Gate Pad 2 Drain Pad 3 SourceNote: IRFNxxx also available withpins 1 and 3 reversed.ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)VGS Gate Source Voltage 20VID Continuous Drain Current (VGS = 0 , Tcase = 25C) 13.9AID Continuous Drain Current (VGS = 0 , Tcase = 100C) 8.8AIDM Pulsed Drain Current 1 56APD Powe

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 irf240smd.pdf Проектирование, MOSFET, Мощность

 irf240smd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf240smd.pdf База данных, Инновации, ИМС, Транзисторы