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PD-94791BIRF3205PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 8.0mGl Fully Avalanche Ratedl Lead-FreeID = 110ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The low thermal resistance andTO-220ABlow package cost of the