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PD - 94653BIRF3205ZAUTOMOTIVE MOSFETIRF3205ZSIRF3205ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofthis design are a 175C junction operating tempera-ture, fast switching speed and improved repetitiveavalanche rating . These features combine to makethis design an extremely efficient and reliable devicefor use in Automotive applications and a wide varietyTO-220ABD2Pak TO-262of other applications.IRF3205ZIRF3205ZS IRF3205ZLAbsolute Maximum Rating