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Isc N-Channel MOSFET Transistor IRF3415LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 VGSSDrain Current-ContinuousTc=2543I AD30Tc=100I Drain Current-Single Pulsed 150 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature 175 chStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.751isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkIsc N-Channel MOSFET Transistor IRF3

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 irf3415l.pdf Проектирование, MOSFET, Мощность

 irf3415l.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf3415l.pdf База данных, Инновации, ИМС, Транзисторы