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INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF3710FEATURESDrain Current I =57A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high effciency switch mode power supplies,Power factor correction and electronic lamp ballasts basedon half bridge.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 57 ADI Drain Current-Single Plused 230 ADMP Total Dissipation @T =25 200 WD CT Max. Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Ther