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PD - 94632IRF3710ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 18m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 59ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processing techniques to achieve extremelylow on-resistance per silicon area. Additional features of this design area 175C junction operating temperature, fast switching speed andimproved repetitive avalanche rating . These features combine to makethis design an extremely efficient and reliable device for use in Automo-tive applications and a wide variety of other applications.TO-220ABAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 59 AContinuous Drain