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PD - 95466AIRF3710ZPbFIRF3710ZSPbFFeaturesIRF3710ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureDVDSS = 100V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 18mGDescriptionID = 59A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resistance per silicon area. Additional featuresof this design are a 175C junction operatingtemperature, fast switching speed and improvedrepetitive avalanche rating . These featurescombine to make this design an extremely efficientand reliable device for use in a wide variety ofapplications.TO-220AB D2Pak TO-262IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbFAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C 59 AContinuous Drain Current