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isc P-Channel MOSFET Transistor IRF4905,IIRF4905FEATURESStatic drain-source on-resistance:RDS(on)0.02Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage -55 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous -74 ADI Drain Current-Single Pulsed -260 ADMP Total Dissipation @T =25 200 WD CMax. Operating Junction Temperature 175 TjStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(j-c) Channel-to-case thermal

 

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 irf4905.pdf Проектирование, MOSFET, Мощность

 irf4905.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf4905.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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