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PD - 97034IRF4905SPbFIRF4905LPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = -55V 150C Operating Temperature Fast SwitchingRDS(on) = 20m Repetitive Avalanche Allowed up to TjmaxG Some Parameters Are Differrent fromID = -42AIRF4905SS Lead-FreeDDDescriptionFeatures of this design are a 150C junction oper-ating temperature, fast switching speed and im-Sproved repetitive avalanche rating . These features SDDcombine to make this design an extremely efficientGGand reliable device for use in a wide variety of otherD2Pak TO-262applications.IRF4905SPbF IRF4905LPbFGDSGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) -70ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited