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IRF510, SiHF510www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 100Available Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.54 175 C operating temperatureAvailableQg max. (nC) 8.3 Fast switchingQgs (nC) 2.3 Ease of parallelingQgd (nC) 3.8 Simple drive requirementsConfiguration Single Material categorization: for definitions of compliance D please see www.vishay.com/doc?99912NoteTO-220AB* This datasheet provides information about parts that areRoHS-compliant and / or parts that are non-RoHS-compliant. Forexample, parts with lead (Pb) terminations are not RoHS-compliant.Please see the information / tables in this datasheet for details.GDESCRIPTIONSThird generation power MOSFETs from Vishay provide the DGSdesigner with the best combina
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irf510 sihf510.pdf Проектирование, MOSFET, Мощность
irf510 sihf510.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irf510 sihf510.pdf База данных, Инновации, ИМС, Транзисторы



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