PDF недоступен!

PD - 95047AIRF630NPbFIRF630NSPbFl Advanced Process TechnologyIRF630NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive RequirementsRDS(on) = 0.30Gl Lead-FreeDescriptionID = 9.3AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing techniquesto achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The l