Скачать даташит для irf630ns:

Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 9.3 ADP Total Dissipation @T =25 82 WD CT Max. Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(j-c) Channel-to-case thermal resistance 1.831isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkIsc N-Channel MOSFET Transistor IRF630NSELEC