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IRF640N-Channel MOSFET TransistorFEATURESStatic drain-source on-resistance:TO-220RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 18 ADI Drain Current-Single Pulsed 72 ADMP Total Dissipation @T =25 150 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 1Channel-to-ambient thermal resistance/WRth(ch-a) 62www.slkormicro.com