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IRF9540, SiHF9540Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.20RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 61 175 C Operating TemperatureQgs (nC) 14 Fast SwitchingQgd (nC) 29 Ease of ParallelingConfiguration Single Simple Drive RequirementsS Compliant to RoHS Directive 2002/95/ECTO-220ABDESCRIPTIONG Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. SThe TO-220AB package is universally preferred for allDDGcommercial-industrial applications at power dissipationP-Channel MOSFET levels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB co