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PD - 96238IRFB3006GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.1ml Uninterruptible Power Supplyl High Speed Power Switching max. 2.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 270A ID (Package Limited) 195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance and AvalancheSOAl Enhanced body diode dV/dt and dI/dt CapabilitySl Lead-Free DGl Halogen-FreeTO-220ABGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited)270ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited)190 AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)195IDMPulsed Drain Current 1080

 

Ключевые слова - ALL TRANSISTORS DATASHEET

  Проектирование, MOSFET, Мощность

  Соответствует RoHS, Сервис, Симисторы, Полупроводник

  База данных, Инновации, ИМС, Транзисторы

 

 
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