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PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl Fully Characterized Capacitance and AvalancheSOAl Enhanced body diode dV/dt and dI/dt CapabilitySl Lead-FreeGDGl Halogen-FreeTO-220ABIRFB4110GPbFSGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25CContinuous Drain Current, VGS @ 10V (Silicon Limited) 180ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 130AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120IDMPulsed Drain C