Скачать даташит для irfb4227:

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 65 ADI Drain Current-Single Pulsed 260 ADMP Total Dissipation @T =25 330 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -40~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.45Channel-to-ambient thermal resistance/WRth(ch-a) 6