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PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG for Fast ResponseTJ max175 Cl High Repetitive Peak Current Capability for Reliable OperationDDl Short Fall & Rise Times for Fast Switchingl175C Operating Junction Temperature for Improved Ruggednessl Repetitive Avalanche Capability for RobustnessGS and Reliability DGl Class-D Audio Amplifier 300W-500WSTO-220AB (Half-bridge)GDSGate Drain SourceDescriptionThis HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switcha

 

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 irfb4229pbf.pdf Проектирование, MOSFET, Мощность

 irfb4229pbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irfb4229pbf.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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