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isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734FEATURESStatic drain-source on-resistance:RDS(on) 3.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 183 ADI Drain Current-Single Pulsed 650 ADMP Total Dissipation @T =25 290 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.51/WRth(ch-a) Channel-to-ambient thermal res