Скачать даташит для irfp22n60k:

iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 22 ADI Drain Current-Single Pulsed 88 ADMP Total Dissipation @T =25 370 WD CT Max. Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.341isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkiscN-Channel MOSFET Transi