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PD - 95041IRFP254NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt Rating VDSS = 250Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 125ml Fully Avalanche Rated Gl Ease of ParallelingID = 23Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut superior to the earlier TO-218 packag