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iscN-Channel MOSFET Transistor IRFP260FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 200 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 46 ADI Drain Current-Single Pulsed 180 ADMP Total Dissipation @T =25 280 WD CT Max. Operating Junction Temperature -55~150 jT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.451isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkiscN-Channel MOSFET T