PDF недоступен!

PD - 95512IRFP3415PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche Rated RDS(on) = 0.042Gl Lead-FreeID = 43ASDescriptionFifth Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fastswitching speed and ruggedized device design thatHEXFET power MOSFETs are well known for, providesthe designer with an extremely efficient and reliabledevice for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but superior to the earlier TO-218 packageTO-247ACbecause of its