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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- : VDSS= 400V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous 20 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pluse 64 A PD Total Dissipation @TC=25 180 W Max. Operating Junction Temperature -55~150 TJ Storage Temperature -55~150 Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth j-c Thermal Resistance, Junction to Case 0.7 /W Rth j-a Thermal Resistance, Junction to Ambient