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IRFP360, SiHFP360Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30 Ease of ParallelingQgd (nC) 110Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDTO-247ACDESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andGcost-effectiveness.The TO-247AC package is preferred forScommercial-industrial applications where higher powerDSG levels preclude the use of TO-220AB devices. TheTO-247AC is similar but superior to the earlier TO-218N-Channel MOSFET package because of its isol
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irfp360 sihfp360.pdf Проектирование, MOSFET, Мощность
irfp360 sihfp360.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irfp360 sihfp360.pdf База данных, Инновации, ИМС, Транзисторы



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