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PD - 9.1230IRFP360LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 400VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.20Dynamic dv/dt RatedRepetitive Avalanche RatedID = 23ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional MOSFETs. Utilizing advanced Hexfettechnology the device improvements allow for reduced gate drive requirements,faster switching speeds and increased total system savings. These deviceimprovements combined with the proven ruggedness and reliability of HEXFETsoffer the designer a new standard in power transistors for switching applications.The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is s