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IRFP360LC, SiHFP360LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.20 Enhanced 30 V VGS Rating RoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 110 Isolated Central Mounting HoleQgs (nC) 28 Dynamic dV/dt RatedQgd (nC) 45 Repetitive Avalanche RatedConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONTO-247ACThis new series of low charge Power MOSFETs achievesignificantly lower gate charge over convertional MOSFETs.Utilizing advanced MOSFETs technology the deviceimprovements allow for reduced gate drive requirements,Gfaster switching speeds and increased total system savings.These device improvements combined with the provenruggedness and reliability of MOSFETs offer the designer