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IRFP360, SiHFP360Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatedVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.20RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 30Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Lead (Pb)-free AvailableDTO-247DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance andcost-effectiveness.The TO-247 package is preferred for commercial-industrialSDapplications where higher power levels preclude the use ofSGTO-220 devices. The TO-247 is similar but superior to theN-Channel MOSFET earlier TO-218 package because of its isolated mountinghole.