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PD - 97106IRFP4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power Supplyl Hard Switched and High Frequency Circuits 12m:RDS(on) typ.Benefitsmax. 15.5m:l Low RDSON Reduces LossesID 78Al Low Gate Charge Improves the Switching PerformanceDl Improved Diode Recovery Improves Switching &DEMI Performancel 30V Gate Voltage Rating Improves Robustnessl Fully Characterized Avalanche SOASG DGSTO-247ACGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 78 c AID @ TC = 100C Continuous Drain Current, VGS @ 10V 55IDM Pulsed Drain Current d 330PD @TC = 25C Maximum Power Dissipation 310 WLinear Derating Factor 2.0W/CVGS Gate-to-Source Voltage 30 VEAS
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irfp4321pbf.pdf Проектирование, MOSFET, Мощность
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