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PD - 97100BIRFP4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG for Fast Responsel High Repetitive Peak Current Capability forDD Reliable Operationl Short Fall & Rise Times for Fast Switchingl175C Operating Junction Temperature forS Improved RuggednessDGGl Repetitive Avalanche Capability for Robustness and ReliabilitySTO-247ACGDSGate Drain SourceDescriptionThis HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switchapplications in Plasma Display Panels. This MOSFET utilizes the latest p

 

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 irfp4332pbf.pdf Проектирование, MOSFET, Мощность

 irfp4332pbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irfp4332pbf.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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