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isc N-Channel MOSFET Transistor IRFP443RFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.1(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 450 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 7 ADI Drain Current-Single Pluse 28 ADMP Total Dissipation @T =25 125 WD CMax. Operating Junction Temperature -55~150 TJT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.83th