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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4468IIRFP4468FEATURESStatic drain-source on-resistance:RDS(on)2.6mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched And High Frequency CircuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 195 ADI Drain Current-Single Pulsed 1120 ADMP Total Dissipation @T =25 520 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT