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PD -97134IRFP4468PbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.0m:l Uninterruptible Power Supplyl High Speed Power Switching max. 2.6m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)290A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessDl Fully Characterized Capacitance and AvalancheSOAl Enhanced body diode dV/dt and dI/dt CapabilitySDl Lead-FreeGTO-247ACGDSGate Drain SourceAbsolute Maximum RatingsSymbol Parameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 290cID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 200AID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195IDM Pulsed Drain Current d 1120PD @TC