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IRFP 450 VDSS = 500 VStandard Power MOSFETID(cont) = 14 ARDS(on) = 0.40 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 56 AS = Source, TAB = DrainIAR 14 AEAR TC = 25C19 mJdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 3.5 V/nsTJ 150C, RG = 2 PD TC = 25C 190 WTJ -55 ... +150 CTJM 150 CTstg -55 ... +150 CFeaturesMd Mounting torque 1.13/10 Nm/lb.in.International standard packagesWeight 6 gLow RDS (on) HDMOSTM processRugged polysilicon gate cell structureMaximum lead temperature for soldering 300 CLow package inductance (