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Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V500Continuous Drain Current (TC=25 o )C 14IDAoCContinuous Drain Current (TC=100 )8.8IDM Drain Current-Pulsed A1 56OVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2 mJ1089OIAR Avalanche Current 14 A1OEAR Repetitive Avalanche Energy 120.5 mJOdv/dt Peak Diode Recovery dv/dt 33.5 V/nsOTotal Power Dissipation (TC=25 o )C 205 WPDLinear Derating Factor W/ oC1.64 Operating Junction a