Скачать даташит для irfp460:

MegaMOSTM IRFP 460 VDSS = 500 VPower MOSFET ID(cont) = 20 ARDS(on) = 0.27N-Channel Enhancement Mode, HDMOSTM FamilySymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C20 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 80 AS = Source, TAB = DrainIAR 20 AEAR TC = 25C28 mJdv/dt IS IDM, di/dt 100 A/s, VDD VDSS, 3.5 V/nsTJ 150C, RG = 2 FeaturesPD TC = 25C 260 WRepetitive avalanche energy ratedTJ -55 ... +150 C Fast switching timesLow RDS (on) HDMOSTM processTJM 150 CRugged polysilicon gate cell structureTstg -55 ... +150 C High Commutating dv/dt RatingMd Mounting torque 1.15/10 Nm/lb.in.Weight 6 gApplicationsMaximum lead temper