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IRFP460B, SiHG460Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.25- Low Input Capacitance (Ciss)Qg max. (nC) 170- Reduced Capacitive Switching LossesQgs (nC) 14- High Body Diode RuggednessQgd (nC) 28- Avalanche Energy Rated (UIS)Configuration Single Optimal Efficiency and Operation- Low CostD- Simple Gate Drive Circuitry- Low Figure-of-Merit (FOM): Ron x QgTO-247AC- Fast Switching Material categorization: For definitions of complianceGplease see www.vishay.com/doc?99912 Note* Lead (Pb)-containing terminations are not RoHS-compliant.Exemptions may apply.SSDAPPLICATIONSGN-Channel MOSFET Consumer Electronics- Displays (LCD or Plasma TV) Server and Telecom Po