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February 2002IRFP460C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies andpower factor corrections.DG