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Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V100Continuous Drain Current (TC=25 ) 8.4IDAContinuous Drain Current (TC=100 )5.31IDM Drain Current-Pulsed 34 AOVGS Gate-to-Source Voltage _ VEAS Single Pulsed Avalanche Energy 2141 mJO1IAR Avalanche Current 8.4 AO1EAR Repetitive Avalanche Energy 3.2 mJOdv/dt Peak Diode Recovery dv/dt 3 6.5 V/nsO*Total Power Dissipation (TA=25 )2.5 WPD Total Power Dissipation (TC=25 )32 W