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PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentIRFR12N25D IRFU12N25DAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 14ID @ TC = 100C Continuous Drain Current, VGS @ 10V 9.7 AIDM Pulsed Drain Current 56PD @TC = 25C Power Dissipation 144 WLinear Derating Factor 0.96 W/CVGS Gate-to-Source Voltage 30 Vdv/dt Peak Diode Recovery dv/dt 9.3 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature RangeCSoldering Temperature, for 10 seconds 300 (1.6mm from

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