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isc N-Channel MOSFET Transistor IRFZ34NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous;Tc=2529I ADTc=10020I Drain Current-Single Pulsed 100 ADMP Total Dissipation 68 WDT Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 2.2/WRth(ch-a) Channel-to-ambient thermal resistance 401isc website