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PD - 9.1311AIRFZ34NS/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175C Operating Temperature RDS(on) = 0.040 Fast SwitchingG Fully Avalanche RatedID = 29ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET Power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides the2 highest power capability and the lowest possible on- D Pa k TO-262resistance in any existing surface mou