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IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the IRFZ44, SiHFZ44 forConfiguration SingleLinear/Audio Applications Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONTO-220ABAdvanced Power MOSFETs from Vishay utilize advancedprocessing techniques to achieve extremely lowon-resistance per silicon area. This benefit, combined withGthe fast switching speed and ruggedized device design thatPower MOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for use in aSD wide variet