Скачать даташит для irg4mc30f:

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channelBenefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT'sInsulated Gate Bipolar Transistors (IGBTs) fromInternational Rectifier have higher usable currentdensities than comparable bipolar transistors, while atthe same time having simpler gate-drive requirements TO-254AAof the familiar power MOSFET. They providesubstantia