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PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on) typ. = 1.9V Lead -Freen-channelBenefits High efficiency in a wide range of applicationsCC Suitable for a wide range of switching frequencies due tolow VCE (ON) and low switching losses Rugged transient performance for increased reliability Excellent current sharing in parallel operationEECCGGApplicationsTO-247AC TO-247ADIRG7PH35UPbF IRG7PH35U-EP U.P.S WeldingGC E Solar inverterGate Collector Emitter Induction heating