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IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-EfficientEVCE(on) typ. = 1.9V @ IC = 20A Tight Parameter Distributionn-channel Lead Free PackageBenefitsC Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), low switching lossesand Ultra-low VFE Rugged transient performance for increased reliability CG Excellent current sharing in parallel operationTO-247AD Low EMIGC EGate Collector EmitterStandard