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PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficientEVCE(on) typ. = 1.65V Tight parameter distributionn-channel Lead Free PackageBenefitsCC High Efficiency in a wide range of applications Suitable for a wide range of switching frequencies due toLow VCE (ON) and Low Switching losses Rugged transient Performance for increased reliabilityEECCGG Excellent Current sharing in parallel operationTO-247AC TO-247AD Low EMIIRGP4063PbF IRGP4063-EPbFG C EGate Collector EmitterAbsolute