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IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V CIC = 90A, TC =100C tSC 5.5s, TJ(max) = 175C E GE C C G G VCE(ON) typ. = 1.7V @ IC = 75A En-channel IRGP4790PbFIRGP4790EPbFApplications TO247ACTO247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175C Increased ReliabilityPositive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP4790PbF TO-247AC Tube 2